Verfahren zur Herstellung integrierter Schaltkreise mit mindestens einem Silizium-Germanium-Heterobipolartransistor,申请号DE200510004708-传众专利搜索

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发明名称	Verfahren zur Herstellung integrierter Schaltkreise mit mindestens einem Silizium-Germanium-Heterobipolartransistor
摘要
申请公布号	DE102005004708(B4)	申请公布日期	2006.11.02
申请号	DE200510004708	申请日期	2005.02.02
申请人	ATMEL GERMANY GMBH	发明人	BRANDL, PETER
分类号	H01L21/8222;H01L21/3105;H01L29/737	主分类号	H01L21/8222
代理机构		代理人
主权项
地址

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