CMOS image sensors and methods of fabricating same

摘要

The transistor has a semiconductor channel region of conductivity type, and an electrically conductive gate on the channel region. A gate insulating region extends between the channel region and gate. A thin nitride layer (30) is directly formed on a gate insulating layer (28) within a process chamber using a decoupled plasma nitridation process. The thin nitride layer operates as a dopant barrier, which blocks out diffusion of dopants from the gate layer. An independent claim is also included for a method of forming an image transfer transistor of an image sensing device.