| 摘要 |
A light emitting device is provided to improve a light emitting characteristic and a thermal characteristic by forming an electrode structure capable of minimizing a phenomenon that currents flowing to a p-n junction part is concentrated on an n-electrode by an equivalent circuit analysis. A first gallium nitride layer is formed on a substrate. A second gallium nitride layer is formed on the first gallium nitride layer. A transparent electrode layer(130) is formed all over the second gallium nitride layer. The edge region of the second gallium nitride layer is peeled to form a first electrode on a region to which the first gallium nitride layer is exposed. A second electrode includes a second electrode branch part and a second electrode end part. The second electrode branch part is formed on the second gallium nitride layer or the transparent electrode layer, extended toward the first electrode. The second electrode end part is formed at the end part of the second electrode branch part, running in parallel with the first electrode. An interval between the first electrode and the second electrode end part is smaller than 1/4 of the width of a light emitting device.
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