| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having no risk of producing poor mounting (failure in connection of an external terminal and a land on a packaging substrate) due to metal burrs of the external terminal, and to provide its manufacturing process. <P>SOLUTION: After a copper plating layer 16 is formed on the surface of a lower-side metal layer 14 on the lower surface 11B of an original substrate 11, an insulating resin layer 19 is formed to cover the copper plating layer 16 on a cut line L extending over the entire width along the cut line L. After a nickel/gold-plated layer 17 is formed on the surface of the copper plating layer 16, the original substrate 11 is cut along the cut line L by means of a cutting tool 12. In the moving direction of the cutting tool 12 for the original substrate 11, the insulating resin layer 19 exists on the downstream side of the copper-plated layer 16. Consequently, the metal composing the copper plating layer 16 can be prevented from being dragged and elongated by the cutting tool 12, and generation of metal burrs in the external terminal can be prevented. <P>COPYRIGHT: (C)2007,JPO&INPIT |
