LAMINATED STRUCTURE, ITS FORMATION METHOD, AND SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To form a group III nitride semiconductor layer on a boron phosphide-based semiconductor layer stably, by solving a problem of instable junction which may be caused by a difference of mutual junction when the group III nitride semiconductor layer is jointed onto the boron phosphide system semiconductor layer.

SOLUTION: The laminated structure body 10 includes a substrate 100 made of crystal, a boron phosphide-based group III-V compound semiconductor layer 101 arranged on the substrate 100, and a group III nitride semiconductor layer 102 jointed onto the surface of the boron phosphide-based group III-V compound semiconductor layer 101. The group III nitride semiconductor layer 102 is jointed to the boron phosphide-based group III-V compound semiconductor layer 101 with its surface atomic arrangement texture of (2×2).

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