| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a flash memory element adapted to prevent a leakage current from being generated in a tunnel oxide film or a dielectric film and also adapted to minimize over-erase. SOLUTION: The method includes steps of sequentially forming a tunnel oxide film 12, an oxide film 14, and a first conductive layer; impregnating a first etchant between grains of the first conductive layer to form nano-crystal points in the oxide film 14; removing the first conductive layer through the use of a second etchant, whereby holes for nano-crystal formation are formed during the process of removing the first conductive layer in the oxide film 14; filling the holes with a non-conductive layer 18 to form nano-crystals 18N in an isolated configuration; sequentially forming a dielectric layer 20 and a second conductive layer 22 on the oxide film 14 including the nano-crystals 18N; and sequentially patterning the second conductive layer 22, the dielectric layer 20, the oxide film 14 including the nano-crystals 18N, and the tunnel oxide film 12. COPYRIGHT: (C)2007,JPO&INPIT
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