SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device includes a first conductivity type SiC semiconductor substrate; a second conductivity type well formed on the SiC semiconductor substrate; a first impurity diffused layer formed by introducing a first conductivity type impurity in a region surrounding the well so as to partially overlap the well; a second impurity diffused layer formed in the well by introducing the first conductivity type impurity in a region at a prescribed interval from the impurity diffused layer; and gate electrodes arranged to face each other by having a gate insulating film in between, in a channel region between the first and the second impurity diffused layers.