| 摘要 |
A TFR(thin film resistor) is provided to stably form a via hole and a trench by a dual damascene process without damaging a TFR by forming a lower interconnection of the same height for connecting both sides of a TFR to an upper interconnection and by forming the TFR on the lower interconnection. First and second lower interconnections(114) are formed in a first insulation layer, having the same height on a substrate and separated from each other by a uniform interval. One side of a resistor(116) is connected to the first lower interconnection, and the other side of the resistor is connected to the second lower interconnection. A second insulation layer is formed on the resultant structure to expose a part of the first and the second lower interconnection, respectively. First and second upper interconnections(124) are respectively connected to the first and the second lower interconnection through the second insulation layer.
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