Rapid thermal processing (RTP) device used in semiconductor device manufacture, has retaining ring that has raised portions formed on outer radial periphery of retaining zone, such that edge of held substrate rests on raised portions

摘要

The device has a retaining ring (2) for holding a circular or disk-shaped substrate (1) in the process chamber of a reactor, such that the edge (1') of the substrate is held by the ring opening (3) of the retaining ring and adjacent a retaining zone (9). The substrate is held resting on the raised portions (4) formed on the outer radial periphery of the retaining zone. A heat source is arranged under the retaining ring, in which heat from the heat source is absorbed by the ring opening. A flow path (6) is formed between the raised portions for the wash gas (5) introduced under the substrate. An independent claim is included for the RTP.