发明名称 Semiconductor device with multi-layered wiring arrangement including reinforcing patterns, and production method for manufacturing such semiconductor device
摘要 <p>A semiconductor device includes a semiconductor substrate (10) having electronic elements produced therein, and an insulating underlayer (14) formed thereon, and a multi-layered wiring arrangement constructed on the insulating underlayer semiconductor substrate. The multi-layered wiring arrangement includes a first insulating interlayer structure (16) formed on the insulating underlayer, a second insulating interlayer structure (30), and a third insulating interlayer structure (44) formed on the first insulating interlayer structure. Each of the first, second and third insulating interlayer structures includes a low-k insulating layer (16B, 30B, 44B), and has a reinforcing element (28, 48) formed therein. The second insulating interlayer structure has a joint plug (30C) formed therein. The reinforcing elements of the first and third insulating interlayer structures are connected to each other through the joint plug. </p>
申请公布号 EP1530236(A3) 申请公布日期 2006.11.02
申请号 EP20040026315 申请日期 2004.11.05
申请人 NEC ELECTRONICS CORPORATION 发明人 OZAWA, KEN
分类号 H01L23/498;H01L23/52;H01L21/02;H01L21/3205;H01L21/4763;H01L21/768;H01L23/00;H01L23/522;H01L23/532 主分类号 H01L23/498
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