| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion doping device preventing a short-circuit between components by flaking away of a metal film generated by sputtering of a Faraday cup. SOLUTION: The ion doping device is equipped with a Faraday cup 11 measuring beam current, a suppression electrode 12 to suppress secondary electrons generated from the Faraday cup 11, an ion suppression electrode 13 to suppress ions from plasma excited by the ion beam, and a grounding chassis 14 covering the above. Irregularities made of faces with shorter diameters than each interval between adojoining components (distances A to G) of the Faraday cup 11, the suppression electrode 12, the ion suppression electrode 13 and the grounding chassis 14 are provided on a surface at least with metal films 17a to 17c formed out of surfaces of the suppression electrode 12, the ion suppression electrode 13 and the grounding chassis 14. COPYRIGHT: (C)2007,JPO&INPIT
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