| 摘要 |
<p>A substrate for electron source formation on which a plurality of electron-emitting devices are arranged, comprising a layer where SiO2 is made a main component on the substrate, wherein an etching rate of the SiO2 layer at room temperature in 0.4 wt % of hydrogen fluoride ammonium solution (NH4-HF2) is 150 nm/min or less reducing the time-dependent change of an electron emission characteristic of an electron-emitting device in low cost, sharply improving the increasing speed of a device current If and the uniformity of final arrival values of If sharply reducing the dispersion of the electron emission characteristic, and an electron source and an image-forming apparatus that each use the substrate.</p> |
