| 摘要 |
<p>A method for fabricating a flash memory device is provided to prevent the residue from remaining in a fuse box region in a peripheral circuit area during an etch process for forming a control gate electrode pattern by rounding the boundary of a fuse box region, by forming an organic ARC made of a material with high step coverage and by sufficiently increasing an etch target with respect to an organic ARC. A gate oxide layer(12) and a first conductive layer(14) are formed on a semiconductor substrate(10) in which a peripheral circuit area including a fuse box region and a cell region are defined. The gate oxide layer and the first conductive layer are patterned so that a floating gate pattern is formed in the cell region and a gate pattern is formed in the peripheral circuit area wherein the substrate positioned in the boundary of the fuse box region is rounded. A second conductive layer(18) for a control gate electrode and an organic ARC(24) are formed on the resultant structure. The organic ARC is etched and patterned. The second conductive layer is etched by using the patterned organic ARC as an etch mask to form a control gate pattern in the cell region. An ONO(oxide nitride oxide) layer is formed between the second conductive layer for the control gate electrode and the floating gate pattern.</p> |
