| 发明名称 |
Stacked gate flash memory device and method of fabricating the same |
| 摘要 |
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
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| 申请公布号 |
US7129537(B2) |
申请公布日期 |
2006.10.31 |
| 申请号 |
US20050076499 |
申请日期 |
2005.03.09 |
| 申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN CHI-HUI |
| 分类号 |
H01L29/788;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 地址 |
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