发明名称 METHODS FOR FABRICATING ZNO NANOSTRUCTURE AND DEVICES THEREOF
摘要 A method for manufacturing a ZnO nano structure and a device using the ZnO nano structure are provided to obtain ZnO nano rods arranged to a direction by growing a two-dimensional ZnO layer on an upper end of one-dimensional ZnO nano rod. A substrate is charged into a chamber(S2). ZnO nano rods are grown on the substrate at 300‹C to 700‹C and under 0.1 Torr to 2 Torr pressure(S6). The ZnO nano rod is cooled in the natural temperature or 200‹C(S8). Oxygen is supplied to the ZnO nano rods at 300‹C to 700‹C and under 2 Torr to 10 Torr pressure(S10). A zinc oxide layer is grown on the ZnO nano rod at 300‹C to 700‹C and under 2 Torr to 6 Torr pressure(S12). The substrate is one of Glss, GaAs, Quartz, LiNbO3, LiTaO3, Si, SiC, SiO2, ZnO, MgZnO, sapphire, a metal layer, and GaN.
申请公布号 KR100643083(B1) 申请公布日期 2006.10.31
申请号 KR20050065687 申请日期 2005.07.20
申请人 POSTECH FOUNDATION;POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 PARK, SUN HONG;KIM, SUN HYO;HAN, SANG WOOK
分类号 H01L21/20 主分类号 H01L21/20
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