发明名称 Bonded wafer processing method
摘要 According to one embodiment a method is disclosed. The method includes applying a photoresist layer to a first wafer, etching the first wafer, bonding the first wafer to a second wafer and thinning the first wafer; wherein an unsupported bevel portion of the first wafer is removed.
申请公布号 US7129172(B2) 申请公布日期 2006.10.31
申请号 US20040811758 申请日期 2004.03.29
申请人 INTEL CORPORATION 发明人 MORROW PATRICK;LIST R. SCOTT;CHAN MICHAEL Y.
分类号 H01L21/302;H01L21/18;H01L21/304;H01L21/762 主分类号 H01L21/302
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