POWER SEMICONDUCTOR DEVICE HAVING IMPROVED PERFORMANCE AND METHOD

摘要

A power semiconductor device having improved performance and method is provided to improve one device parameter while not deteriorating the quality of other device parameters by forming a semiconductor device in a body made of a semiconductor material and by including a counter-doped drain region separated from a channel region. A substrate(12) has a main surface(18), including first conductivity type. A pedestal structure is placed on a part of the main surface. A conductive material is disposed along the lateral surface of the pedestal structure to confine the edge of a first conductive electrode of a semiconductor device. A first doped region of second conductivity type is formed in the main surface adjacent to the first conductive electrode. A part of the first doped region forms a channel region when the semiconductor device operated. A current transfer region of first conductivity type is formed in the first doped region. A second doped region of second conductivity type is formed in the substrate adjacent to the drain edge of the channel region. A first conductive layer is connected to the second doped region.