发明名称 |
METHOD FOR PRODUCING PART INCORPORATING SILICON SUBSTRATE WHOSE SURFACE IS COVERED WITH SILICON CARBIDE FILM |
摘要 |
FIELD: manufacture of semiconductor materials for semiconductor devices. ^ SUBSTANCE: proposed method for manufacturing part incorporating silicon substrate with silicon carbide film on its surface includes synthesis of silicon carbide film on substrate surface by joint heating of substrate and carbon-containing material at temperature of 1100 to 1400 °C; used as carbon-containing material is solid material brought in mechanical contact with substrate. ^ EFFECT: facilitated procedure. ^ 11 cl, 5 dwg
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申请公布号 |
RU2286616(C2) |
申请公布日期 |
2006.10.27 |
申请号 |
RU20050103321 |
申请日期 |
2005.02.10 |
申请人 |
FOND PODDERZHKI NAUKI I OBRAZOVANIJA;OBSHCHESTVO S OGRANICHENNOJ OTVETSTVENNOST'JU "UPRAVLJAJUSHCHAJA KOMPANIJA "SOZVEZDIE" (OOO "UK "SOZVEZDIE") |
发明人 |
GORDEEV SERGEJ KONSTANTINOVICH;KORCHAGINA SVETLANA BORISOVNA;KUKUSHKIN SERGEJ ARSEN'EVICH;OSIPOV ANDREJ VIKTOROVICH |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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