| 摘要 |
A method of forming a BPSG(borophosphosilicate glass) film in a semiconductor device is provided to simplify processing condition setup procedure and to control boron concentration and phosphorus concentration in the BPSG film. A substrate is inserted in a reactor. A trial BPSG film is formed on the substrate by supplying a boron source, a phosphorus source and a silicon source to the reactor during a first depositing time(6). Supply quantities of the silicon, the boron and the phosphorus sources are fixed to apply to the reactor by using an uniform mixing rate(8). The silicon source is a TEOS(tetra ethyl ortho silicate). The boron source is a TEB(tri ethyl borate) and the phosphorus source is a TEPO(tri ethyl phosphate).
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