发明名称 |
EVALUATION METHOD OF SEMICONDUCTOR WAFER, EVALUATION DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER |
摘要 |
PROBLEM TO BE SOLVED: To provide an evaluation method of nano topography on the surface of a semiconductor wafer, an evaluation system, and a manufacturing method of a semiconductor wafer wherein the surface of the nano topography is favorable. SOLUTION: The method of evaluating the nano topography of the surface of the semiconductor wafer cut from a semiconductor ingot is carried out such that a surface shape in a cutting direction is measured before polishing the wafer surface at least, the maximum inclination value of the curvature of a wafer surface is obtained from the sectional shape in the cut direction of the measured surface shape, and the nano topography of a wafer surface after polish is evaluated by this acquired maximum value. COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2006294774(A) |
申请公布日期 |
2006.10.26 |
申请号 |
JP20050111633 |
申请日期 |
2005.04.08 |
申请人 |
SHIN ETSU HANDOTAI CO LTD;NAGANO ELECTRONICS INDUSTRIAL CO LTD |
发明人 |
OKABE KEIICHI;TAKANO HISAKAZU;NAKAMATA DAISUKE |
分类号 |
H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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