发明名称 EVALUATION METHOD OF SEMICONDUCTOR WAFER, EVALUATION DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR WAFER
摘要 PROBLEM TO BE SOLVED: To provide an evaluation method of nano topography on the surface of a semiconductor wafer, an evaluation system, and a manufacturing method of a semiconductor wafer wherein the surface of the nano topography is favorable. SOLUTION: The method of evaluating the nano topography of the surface of the semiconductor wafer cut from a semiconductor ingot is carried out such that a surface shape in a cutting direction is measured before polishing the wafer surface at least, the maximum inclination value of the curvature of a wafer surface is obtained from the sectional shape in the cut direction of the measured surface shape, and the nano topography of a wafer surface after polish is evaluated by this acquired maximum value. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006294774(A) 申请公布日期 2006.10.26
申请号 JP20050111633 申请日期 2005.04.08
申请人 SHIN ETSU HANDOTAI CO LTD;NAGANO ELECTRONICS INDUSTRIAL CO LTD 发明人 OKABE KEIICHI;TAKANO HISAKAZU;NAKAMATA DAISUKE
分类号 H01L21/66 主分类号 H01L21/66
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