IMAGE SENSING APPARATUS AND METHOD USING RADIATION

摘要

This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT ( 1 ) is formed on an insulating substrate ( 11 ). The semiconductor layer ( 19 ) and n⁺-semiconductor layer ( 20 ) of an MIS photoelectric conversion element ( 2 ) are formed on a second insulating layer ( 18 ) that covers the read TFT ( 1 ) to be aligned with source and drain electrodes ( 16 ) functioning as lower electrodes. The semiconductor layer ( 21 ) of a TFT sensor ( 3 ) is formed to be aligned with a gate electrode ( 17 ) when viewed from the upper side. The semiconductor layers ( 19, 21 ) are formed from the same layer. The upper electrode ( 22 ) of the MIS photoelectric conversion element ( 2 ) is formed on the n⁺-semiconductor layer ( 20 ). Two ohmic contact layers ( 23 ) are formed on the semiconductor layer ( 21 ). Source and drain electrodes ( 24 ) are formed on the two ohmic contact layers ( 23 ), respectively.