Field effect transistor structures

摘要

An embodiment of the present invention provides a structure comprising a field effect transistor (FET) comprising: at least one source rail with at least one source finger; at least one drain rail with at least one drain finger; and at least one serpentine gate having a plurality of gate fingers, said serpentine gate serpentining between said at least one source finger and said at least one drain finger; and at least one feedforward capacitor symmetrically coupled with said FET via at least one gate rail.