| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a storage element in which a current value required for writing can be reduced by enhancing spin injection efficiency. <P>SOLUTION: A magnetization fixing layer 31 is provided for a storage layer 17 holding information by the magnetization state of a magnetic body through an intermediate layer 16 composed of magnesium oxide. Direction of magnetization M1 in the storage layer 17 is changed by feeding a current in the laminating direction and information is recorded for the storage layer 17. At least one of ferromagnetic layers 17, 13, 15 constituting the storage layer 17 or the magnetization fixing layer 31 principally comprises NiFeB wherein the content of Ni is 50-80 atom% and the content of B is 10-30 atom% in the storage element 3. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
