| 摘要 |
PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which reliability of electric characteristics is enhanced by preventing a gate insulating film from becoming thin partially. SOLUTION: The process for fabricating a semiconductor device 11 comprises steps of: forming an isolation layer 13 on a silicon substrate 12; forming a polysilicon film 19a, i. e. a new source for supplying silicon, on the isolation layer 13; and forming an isolation layer 13b composed of a new silicon oxide film in addition to the previously formed isolation layer 13 composed of a silicon oxide film by oxidizing silicon contained in the polysilicon film 19a and an element forming region 12a thermally with supplied oxygen. COPYRIGHT: (C)2007,JPO&INPIT
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