| 摘要 |
PROBLEM TO BE SOLVED: To improve the adhesiveness of the second insulating film laminated on the first insulating film and to prevent peeling when a second insulating film is ground, by irradiating a plasma at the periphery of the first insulting film. SOLUTION: In the semiconductor device 1 having a multilevel metallization texture is set on the substrate 11 at the semiconductor device 1, the insulating film which insulates electrically between interconnect lines of the above multilevel metallization structure consists of the lamination of the first insulating film 21 and the second insulating film 22, and a plasma exposure region 31 is formed on the periphery of the substrate 11 and on the first insulating film 21 between the above first insulating film 21 and the above second insulating film 22. COPYRIGHT: (C)2007,JPO&INPIT
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