| 摘要 |
PROBLEM TO BE SOLVED: To avoid breakdown in the corner region of a channel region by forming an n-type impurity region under the condition that a depletion layer prolonged from the channel region of both sides carries out pinch-off. SOLUTION: The semiconductor device is provided with an n-type impurity region 14 in the lower part of a gate electrode. By making the gate length be less than the depth of the channel region, a junction surface is formed, in which the side surface of the channel region 4 ajacent to the side surface of the n-type impurity region 14 is roughly perpendicular. Consequently, since the depletion layer spreads uniformly in the substrate depthwise direction, the predetermined breakdown voltage is securable. Moreover, since the spacing of the channel 4 region sandwiching the gate electrode 13 becomes uniform at the front surface and the bottom, the impurity concentration of the n-type impurity region is increased, resulting in an achievement of a low on-resistance. COPYRIGHT: (C)2007,JPO&INPIT
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