摘要 |
<p>The present invention discloses a polishing slurry and its use in polishing a metal-containing substrate, the said polishing slurry contains polishing abrasive grains, a carrier, Cu<SUP>2+</SUP> or other higher valency metal salts and a dismutation reactant. The poshing slurry of the present invention has higher polishing rate and polishing selectivity, it can remarkablely reduce the erosion degree of the polished surface of the substrate, thereby the polished surface of the substrate has lower rate of defect.</p> |
申请人 |
ANJI MICROELECTRONICS (SHANGHAI) CO., LTD.;YANG, ANDY, CHUNXIAO;SHIAO, DANNY, ZHENGLONG;YU, CHRIS, CHANG |
发明人 |
YANG, ANDY, CHUNXIAO;SHIAO, DANNY, ZHENGLONG;YU, CHRIS, CHANG |