| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit an increase of a device resistance and the variation of radiation angle of a laser beam, and to provide its manufacturing method. SOLUTION: A first clad layer 2, an active layer 3, a second clad layer 4, an etching-stop layer 5, an intermediate layer 6, and a third clad layer 7, are formed on a semiconductor substrate 1. Then, following the third clad layer 7, a dry-etching is carried out in order while the predetermined film thickness of the intermediate layer 6 is left, and a strip-shaped ridge 12 is formed. The remaining intermediate layer 6 is removed using a process of wet-etching to expose the etching-stop layer 5. Now, the etching rate when the intermediate layer 6 is wet-etched is faster than that of the etching-stop layer 5 and the third clad layer 7 and its film thickness is 0.5μm or less. COPYRIGHT: (C)2007,JPO&INPIT
|
