| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory apparatus which has a complete hidden refresh function and in which power consumption is small. SOLUTION: In a DRAM having the complete hidden refresh function, when data refresh is to be carried out in an active mode, a signal RX0-1 for selecting a way W0 is set to a "H" level and then reset to an "L" level at each cycle while the corresponding upper address is designated, when data refresh is to be carried out in a standby mode, the signal RX0-1 is maintained at the "H" level and is not reset to the "L" level while the corresponding upper address is designated, thereby reducing the standby current. COPYRIGHT: (C)2007,JPO&INPIT
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