| 摘要 |
A memory device having an input/output sense amplifier is provided to prevent error of read data, by adjusting amplification speed and rate of the input/output sense amplifier according to loading of an input/output line. In a memory device having an input/output sense amplifier(IOSA), a memory cell block comprises plural memory blocks. A sense amplifier receives data read from the memory cell block. When data is read from a part of the memory blocks, the driving capability of the sense amplifier is increased. The distance for the data to arrive at the sense amplifier from the partial memory blocks is farther than the distance for the data to arrive at the sense amplifier from the other memory blocks.
|
