| 摘要 |
A semiconductor integrated circuit device having a nonvolatile semiconductor memory and a programming method thereof are provided to reduce the thickness of a gate insulation film and the distance from an adjacent transmission transistor, by reducing a write voltage. In a semiconductor integrated circuit device, a memory cell array(13) comprises plural memory cell transistors(MT) installed in a matrix form. The memory cell transistor includes a floating gate formed on a gate insulation film, an inter-gate insulation film formed on the floating gate, and a control gate formed on the inter-gate insulation film. A high voltage circuit region comprises first and second high withstanding voltage transistors. The first high withstanding voltage transistor is arranged around the memory cell array, and one end of a current path thereof is connected to a selection control gate. The second high withstanding voltage transistor increases a voltage applied to the selection control gate to a write voltage, by first capacitive coupling between the selection control gate and a first unselected control gate, by applying a middle voltage enough to conduct the current path of the memory cell transistor to the first unselected control gate. One end of a current path of the second high withstanding voltage transistor is connected to the first unselected control gate adjacent to the selection control gate.
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