METHOD OF MANUFACTURING EUVL ALTERNATING PHASE SHIFT MASK

摘要

A method for manufacturing an EUVL(Extreme Ultra-Violet Lithography) alternating phase shift mask is provided to decrease reflectivity in a non-phase shift region when EUV light irradiated to a phase shift mask by physically changing a structure of a reflecting layer in the non-phase shift region. A substrate(100) is prepared to have reflecting layers(112,116), multi layering structure, where heterogeneous materials are layered in turn many times. A shielding layer is formed on the reflecting layers on the substrate. The reflecting layers include first and second reflecting layers. An etch stop layer is disposed between the first and second reflecting layers. A photoresist pattern is formed on the shielding layer to expose part thereof. Anisotropic dry etching is performed on the shielding layer by using the first photoresist pattern as an etching mask to form a shielding layer pattern(120a). The first photoresist pattern is removed. As the result, a reflecting region(100a) exposed through the shielding layer pattern and a non-reflecting region(100b) covered by the shielding layer pattern are defined on the first and second reflecting layers on the substrate.