Group III nitride light emitting device with silicon carbide cladding layer

摘要

A semiconductor structure (10) for light emitting devices includes a Group III nitride active layer (13) positioned between a silicon carbide cladding layer (11) and a Group III nitride cladding layer (12), wherein the silicon carbide cladding layer (11) and the Group III nitride cladding (12) layer have opposite conductivity types. Moreover, the silicon carbide cladding layer (11) and the Group III nitride cladding layer (12) have respective bandgaps that are larger than the bandgap of the active layer (13).