发明名称 |
TRANSISTOR INCLUDING A DEPOSITED CHANNEL REGION HAVING A DOPED PORTION |
摘要 |
<p>A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.</p> |
申请公布号 |
EP1714326(A1) |
申请公布日期 |
2006.10.25 |
申请号 |
EP20040815150 |
申请日期 |
2004.12.20 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
HOFFMAN, RANDY |
分类号 |
H01L29/786;H01L27/12;H01L29/10 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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