发明名称 Real-time mathematical model for wafer spin defect detection and for misalignment analyses
摘要 According to various embodiments, there is a method of inspecting semiconductor wafers comprising comparing a value for each wafer in a lot of wafers to a mathematical model, where the values include data about at least one feature on the wafers, and where the mathematical model comprises a threshold value corresponding to the at least one feature, and further where values greater than the threshold value comprise an indication of a spin defect. The method can also comprise determining whether any of the values of the wafers in the lot are not greater than the threshold value, grouping into a group (P) those wafers whose values are not greater than the threshold value, and flagging for further inspection those wafers having values greater than the threshold value.
申请公布号 US7127359(B2) 申请公布日期 2006.10.24
申请号 US20050067786 申请日期 2005.03.01
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 CHITYALA ADITYA;AKOMER ERROL PHILIP;TERVOOREN JASON CHARLES
分类号 G06F19/00 主分类号 G06F19/00
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