| 摘要 |
<p>There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5x1017 atoms/cm3 and not more than 1.5x1018 atoms/cm3, and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5x1013 atoms/cm3 and not more than 5x1015 atoms/cm3. There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.</p> |
