| 发明名称 |
Rework process of patterned photo-resist layer |
| 摘要 |
A rework process of patterned photo-resist layer is provided. First, a substrate is provided with a first DARC, a first primer and a first patterned photo-resist layer being sequentially formed thereon. Next, remove the first patterned photo-resist layer and the first primer from the first DARC. After that, form a second DARC on the first DARC; form a second primer on the second DARC. Last, form a second patterned photo-resist layer on the second primer.
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| 申请公布号 |
US7125741(B2) |
申请公布日期 |
2006.10.24 |
| 申请号 |
US20030720735 |
申请日期 |
2003.11.24 |
| 申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
YEN YU-LIN;CHANG CHING-YU |
| 分类号 |
H01L21/00;H01L21/027;H01L21/033;H01L21/302;H01L21/44;H01L21/461;H01L21/4763 |
主分类号 |
H01L21/00 |
| 代理机构 |
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