发明名称 Semiconductor memory device for low power system
摘要 A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.
申请公布号 US7126867(B2) 申请公布日期 2006.10.24
申请号 US20050044519 申请日期 2005.01.26
申请人 HYNIX SEMICONDUCTOR, INC. 发明人 KANG HEE-BOK;AHN JIN-HONG
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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