发明名称 |
Semiconductor memory device for low power system |
摘要 |
A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.
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申请公布号 |
US7126867(B2) |
申请公布日期 |
2006.10.24 |
申请号 |
US20050044519 |
申请日期 |
2005.01.26 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
KANG HEE-BOK;AHN JIN-HONG |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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