| 摘要 |
<p>A non-volatile memory device with split-gate type and its fabrication method are provided to improve mis-align and to prevent a conductive stringer. An active region(51) is defined on a semiconductor substrate(50). A plurality of layers for storing electric charges, a first conductive layer and a capping layer are formed on the active region. The capping layer is pattered and is isolated with a predetermined interval to form a pair of capping layer patterns(58a, 60a). A first conductive layer pattern is formed having a line width including at least one pair of the capping layer patterns. A second conductive layer is formed on a surface of a resultant structure which the first conductive layer pattern is formed. A first photoresist is formed with an opening across the active region between the pair of capping layer patterns on the second conductive layer. A pair of conductive layer pattern is formed by etching the second conductive layer by using the first photoresist pattern as an etch mask and the first conductive layer pattern by using the pair of capping layer patterns as the etch mask. The second conductive layer is patterned so as to form a pair of word lines.</p> |
