发明名称 |
SEMICONDUCTOR DEVICE COMPRISING A HETEROJUNCTION |
摘要 |
A semiconductor device with a heterojunction. The device comprises a substrate and at least one nanostructure. The substrate and nanostructure is of different materials. The substrate may e.g. be of a group IV semiconductor material, whereas the nanostructure may be of a group III-V semiconductor material. The nanostructure is supported by and in epitaxial relationship with the substrate. A nanostructure may be the functional component of an electronic device such as a gate-around-transistor device. In an embodiment of a gate-around-transistor, a nanowire (51) is supported by a substrate (50), the substrate being the drain, the nanowire the current channel and a top metal contact (59) the source. A thin gate dielectric (54) is separating the nanowire and the gate electrode (55A, 55B).
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申请公布号 |
KR20060109956(A) |
申请公布日期 |
2006.10.23 |
申请号 |
KR20067012427 |
申请日期 |
2006.06.22 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
BAKKERS ERIK P. A. M.;WOLTERS ROBERTUS A. M.;KLOOTWIJK JOHAN H. |
分类号 |
H01L21/329;H01L21/336;H01L29/06;H01L29/775;H01L29/786;H01L29/861 |
主分类号 |
H01L21/329 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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