| 摘要 |
FIELD: photodiodes responding to ultraviolet spectrum region. ^ SUBSTANCE: proposed ultraviolet photodetector characterized in reduced sensitivity in visible region of spectrum has transparent hole-injection layer that functions as anode applied to solid transparent substrate, organic semiconductor layer, and electron-injection metal layer that functions as cathode. Organic semiconductor layer has active photosensitive layer of 3-(4-biphenyl)-(4-tertiary-butyl phenyl)-(4-dimethyl amino phenyl)-1,2,4-triazole (DA-BuTAZ) that abuts against cathode and organic hole-conducting layer that abuts against anode. ^ EFFECT: maximized photosensitivity in ultraviolet spectrum region at reduced sensitivity in visible region. ^ 3 cl, 2 dwg |
