| 摘要 |
PROBLEM TO BE SOLVED: To form a uniform diffusion layer near a side wall of a trench to restrain an occurrence of a leak current. SOLUTION: In a method for manufacturing a semiconductor device, a silicon nitride film 112 in which a region corresponding to an element isolation region is opened is used as a mask, and a part of a silicon oxide film 111 and a semiconductor silicon substrate 110 is removed by sequential etching to form a trench 114. An insulating film composed of the silicon oxide film 111 and the silicon nitride film 112 is used as a mask, and an epitaxial layer 115 having doped boron is formed in a portion where the trench 114 is formed by a selective epitaxial growth, and simultaneously, boron is diffused through the epitaxial layer 115 to obtain a boron diffusion layer 116. COPYRIGHT: (C)2007,JPO&INPIT |
