发明名称 |
Method for repairing mask-blank defects using repair-zone compensation |
摘要 |
A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo-Si multilayer mirrors. Repairing Mo-Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo-Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter.
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申请公布号 |
US2006234135(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20050109026 |
申请日期 |
2005.04.18 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CA |
发明人 |
HAU-RIEGE STEFAN P.;SWEENEY DONALD W.;BARTY ANTON;MIRKARIMI PAUL B.;STEARNS DANIEL G. |
分类号 |
G03C5/00;G03F1/00;G21K5/00 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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