发明名称 Method for repairing mask-blank defects using repair-zone compensation
摘要 A method for repairing mask-blank defects uses repair-zone compensation. Local disturbances are compensated over the post-defect-repair repair-zone by altering a portion of the absorber pattern on the surface of the mask blank. This enables the fabrication of defect-free (since repaired) X-ray Mo-Si multilayer mirrors. Repairing Mo-Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo-Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter.
申请公布号 US2006234135(A1) 申请公布日期 2006.10.19
申请号 US20050109026 申请日期 2005.04.18
申请人 THE REGENTS OF THE UNIVERSITY OF CA 发明人 HAU-RIEGE STEFAN P.;SWEENEY DONALD W.;BARTY ANTON;MIRKARIMI PAUL B.;STEARNS DANIEL G.
分类号 G03C5/00;G03F1/00;G21K5/00 主分类号 G03C5/00
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