| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that is operated at a high speed even at a low voltage and reduces bleed current consumption. <P>SOLUTION: The semiconductor memory device has a folded bit line structure, and is provided with a first cell array that applies a signal to a selected first BL or first/BL, a first conductive type-first well having a first precharge-MOS transistor of second conductive type-channel that equalizes the first BL and the first/BL, a sense amplifier-MOS transistor of first conductive type-channel that senses and amplifies a difference in signals between the first BL and the first/BL, a second conductive type-first well having a MOS transistor of first conductive type-channel that connects and separates the first BL and the first/BL and/from the sense amplifier-MOS transistor, and a first conductive type-second well having a sense amplifier-second conductive type channel MOS transistor that senses and amplifies a difference in signals applied to the first BL and the first/BL. <P>COPYRIGHT: (C)2007,JPO&INPIT |
