发明名称 SPIN INJECTION MAGNETIC DOMAIN TRANSFER ELEMENT AND DEVICE USING SAME
摘要 PROBLEM TO BE SOLVED: To provide an element in which magnetic wall transfer can be detected with electrical resistance and make it possible both to accomplish magnetic wall transfer at high speed and low current, and to obtain the thermal stability of a recorded magnetic wall. SOLUTION: A spin injection magnetic domain transfer element is so constructed that it includes a magnetic wall transfer layer having a magnetic wall, a first magnetic layer group having at least one ferromagnetic layer, and a second magnetic layer group having at least one ferromagnetic layer. The first magnetic layer group and the second magnetic layer group are disposed at both the ends of the magnetic wall transfer layer. A magnetic wall of the magnetic wall transfer layer is transferred by passing an electron between the first magnetic layer group and the second magnetic layer group. It is desirable that part of the magnetic wall transfer layer should be antiferromagnetically coupled with the first magnetic layer group, and part of the magnetic wall transfer layer should be antiferromagnetically or ferromagnetically coupled with the second magnetic layer group. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006287081(A) 申请公布日期 2006.10.19
申请号 JP20050107114 申请日期 2005.04.04
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 SAITO AKIRA
分类号 H01L29/82;G11B5/39;G11C11/15;H01L21/8246;H01L27/105;H01L43/08 主分类号 H01L29/82
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