| 摘要 |
In a nozzle unit 4 equipped with processing-liquid nozzles 4 A to 4 J, an air layer 73 and a solvent layer 74 for processing liquid are successively formed outside a processing-liquid layer 71 included in the tip of each nozzle 4 A ( 4 B to 4 J). Next, the solvent layer 74 in the nozzle 4 A is thrown out into a drain part 62 of a standby unit 6 and subsequently, the processing liquid is supplied from the nozzle 4 A to the surface of a wafer W, performing a coating process. After completing the coating process, the processing liquid remaining in the nozzle 4 A is sucked and continuously, respective tips of the nozzles 4 A to 4 J are dipped into respective solvents in solvent reservoir 62 A to 62 J, respectively. From this state, by sucking in the nozzle 4 A, there are newly formed, outside the processing layer 71 in the tip of the nozzle 4 A, an air layer 73 and a solvent layer 74 . Thus, in supplying a substrate, such as semiconductor wafer, with a processing liquid by use of a nozzle unit having a plurality of processing-liquid nozzles integrated, it is possible to prevent dryness of the processing liquids in the respective nozzles while preventing the nozzle unit from being large-sized.
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