发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To attain the further physical size reduction of a standard cell and raise its degree of integration. SOLUTION: This standard cell has a substrate region 22 formed beyond the border line with an adjoining cell 21. This substrate region 22 is formed sharing area with the substrate region 22 of one of the cells 21 among adjoining cells 21. In the substrate region 22, contacts 23 that supply predetermined electric potential to the substrate 22 are formed at an uneven interval. The contacts 23 are arranged and formed from the center of the width of the substrate region to the inside of the cell 21. The diffusion layer that forms the part of the substrate region 22, where the contacts 23 are arranged, extends and is formed and configured inside the cell. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006287257(A) 申请公布日期 2006.10.19
申请号 JP20060167380 申请日期 2006.06.16
申请人 TOSHIBA CORP 发明人 UMEMOTO YASUNOBU;SEI TOSHIKAZU;MORIMOTO HISAYOSHI;SUZUKI HIROAKI
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L21/8238;H01L27/04;H01L27/088;H01L27/092 主分类号 H01L21/822
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