| 摘要 |
A method for fabricating a semiconductor device is provided to decrease deposition and patterning processes by remarkably simplifying a process for forming tensile stress and compressive stress suitable for each channel of NMOS and PMOS transistors. PMOS and NMOS transistors are formed in a predetermined region on a substrate(30). A first stress layer(33) having tensile stress and compressive stress is formed to cover all of the PMOS and NMOS transistor regions. A second stress layer(34) having different stress than that of the first stress layer is formed by an in-situ method to cover all of the PMOS and NMOS transistor regions. A part of the second stress layer formed on one of the MOS transistor regions is selectively removed. When the first stress layer has tensile stress, the second stress layer has compressive stress. When the first stress layer has compressive stress, the second stress layer has tensile stress.
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