METHOD FOR FABRICATING CMOS IMAGE SENSOR

摘要

A method for manufacturing a CMOS image sensor is provided to prevent the nonuniformity of salicide on a gate conductive layer and to improve the stability of a transistor by restraining the damage of the gate conductive layer and a semiconductor substrate using an etch stop layer and an etch barrier. A gate conductive layer(303), an etch stop layer(304) and a doped barrier layer(305) are sequentially formed on a semiconductor substrate(301). A plurality of gate electrodes are formed by etching selectively the resultant structure. An etch barrier for protecting the substrate and the gate conductive layer is formed on the resultant structure. A photoresist layer is formed. The photoresist layer is selectively removed from the gate electrode.