SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, AND SUBSTRATE FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in performance and reliability by making clear the relationship between an AlN buffer layer and the performance and reliability of a GaN-based FET, its manufacturing method, and a substrate for manufacturing the semiconductor device. SOLUTION: The semiconductor device is provided with the substrate (10), the buffer layer (12) formed on the substrate (10) and composed of aluminum nitride having a film thickness of 5-40 nm, an operation layer (20) formed on the buffer layer (12) and composed of a gallium nitride-based semiconductor, and a control electrode (26) provided on the operation layer (20). Its manufacturing method, and the substrate for manufacturing the semiconductor device are provided. COPYRIGHT: (C)2007,JPO&INPIT